Introduction

Introduction

The Design and Applications of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Devices training course is a cutting-edge program tailored for engineers and professionals working in power electronics, renewable energy systems, automotive electrification, and high-frequency converters. With the rise of wide bandgap (WBG) semiconductors, GaN and SiC devices have revolutionized power device design by enabling higher efficiency, smaller form factors, and improved thermal management compared to traditional silicon-based devices.

Training Course on Design and Applications of GaN and SiC Power Devices explores the core physics, fabrication techniques, switching characteristics, and system-level integration of GaN and SiC transistors. Participants will gain deep insights into high-efficiency converters, EV charging systems, RF applications, and high-voltage industrial drives. Using simulation tools, application notes, and real-world case studies, learners will design and evaluate power systems leveraging WBG devices for high voltage, high temperature, and fast switching environments.

Programme Curriculum

Training Course on Design and Applications of GaN and SiC Power Devices

Introduction

Course duration

10 Days

Course Objectives

Understand the physics and materials science of GaN and SiC semiconductors
Compare performance metrics of WBG vs traditional silicon devices
Analyze switching characteristics and thermal behavior of GaN/SiC
Design high-frequency, high-efficiency power converters
Simulate GaN and SiC circuits using industry-standard tools (LTSpice, PLECS)
Implement gate driver circuits tailored for GaN and SiC FETs
Explore packaging technologies for thermal and EMI management
Design DC-DC and AC-DC converters using GaN and SiC
Evaluate reliability and failure modes of WBG devices
Integrate GaN/SiC devices in automotive powertrains and EV chargers
Apply WBG semiconductors in renewable energy and smart grids
Optimize layout and parasitic reduction for fast-switching designs
Analyze real-world applications: Lidar, RF amplifiers, and aerospace systems

Organizational Benefits

Accelerate innovation in high-performance power systems
Improve energy efficiency in electric vehicle platforms
Reduce converter size and system cooling requirements
Enhance product lifetime with reliable WBG devices
Equip teams with simulation-based design capabilities
Facilitate faster go-to-market with efficient power modules
Enable compliance with global energy efficiency standards
Future-proof hardware designs for AI, 5G, and EV infrastructure
Promote cross-domain expertise in digital control and power hardware
Strengthen organizational leadership in power semiconductor technology

Target Participants

Power Electronics Engineers
Electrical Design Engineers
Hardware System Architects
Automotive Powertrain Developers
Renewable Energy System Integrators
Researchers and Faculty in Electronics Engineering
Graduate Students in Semiconductor Devices and Power Systems

Course Outline

Module 1: Introduction to Wide Bandgap Semiconductors

Overview of WBG materials: GaN vs SiC vs Silicon
Benefits of wide bandgap devices in modern systems
Device-level characteristics and bandgap theory
Thermal conductivity and breakdown voltage
Case Study: GaN adoption in 5G base stations

Module 2: GaN Device Fundamentals

Lateral vs vertical GaN FET structures
Enhancement-mode vs depletion-mode GaN
Switching speed and dead-time minimization
Voltage ratings and dynamic performance
Case Study: GaN in high-speed USB chargers

Module 3: SiC Device Fundamentals

SiC MOSFETs and diodes operation
High-voltage and high-temperature characteristics
On-state resistance and switching loss analysis
Packaging options for SiC devices
Case Study: SiC in industrial motor drives

Module 4: Thermal Management in WBG Devices

Junction-to-case and system-level thermal modeling
Heatsinks, TIMs, and active cooling strategies
Thermal impedance and transient analysis
GaN/SiC package thermal limits
Case Study: Thermal design of EV inverters

Module 5: Gate Driver Design for GaN and SiC

Gate voltage requirements and isolation techniques
Common-mode transients (dV/dt) handling
Driver ICs and integrated solutions
Bootstrap and negative drive schemes
Case Study: Gate driver for 650V GaN FETs

Module 6: EMI and Parasitic Management

Parasitic inductance and capacitance effects
PCB layout guidelines for WBG designs
Snubber and filtering techniques
Radiated vs conducted emissions
Case Study: EMI issues in GaN-based telecom PSU

Module 7: DC-DC Converter Design with GaN/SiC

Topologies: Buck, Boost, LLC, Flyback
Frequency and efficiency optimization
Voltage stress and ZVS techniques
Digital control integration
Case Study: Compact 48V-to-12V GaN converter

Module 8: AC-DC Conversion and PFC

Bridgeless and totem-pole PFC design
GaN/SiC for universal AC input systems
Harmonic mitigation and power quality
Thermal performance in rectifiers
Case Study: GaN-based server power supply

Module 9: Simulation and Modeling

Behavioral and SPICE modeling of GaN/SiC
PLECS and LTspice for fast prototyping
Extracting switching waveforms and efficiency
Integration into MATLAB/Simulink
Case Study: SiC converter simulated in PLECS

Module 10: High Power and High Voltage Applications

Inverter design for PV and battery storage
High-voltage SiC switches in HVDC systems
Dual-active-bridge topologies
Isolation and creepage considerations
Case Study: 1.2kV SiC in solar inverters

Module 11: Reliability and Ruggedness

Short-circuit robustness and avalanche ratings
Gate oxide reliability and stress conditions
Lifetime prediction methodologies
Failure analysis techniques
Case Study: Accelerated life testing of GaN transistors

Module 12: Applications in Automotive Systems

SiC in traction inverters for EVs
On-board chargers using GaN and SiC
Vehicle-to-grid (V2G) and fast charging
Safety and ISO26262 considerations
Case Study: Tesla’s adoption of SiC in Model 3

Module 13: Renewable and Smart Grid Integration

GaN/SiC for microinverters and grid-tie inverters
Islanding detection and reactive power control
Wide input voltage handling
Grid code compliance
Case Study: GaN inverter for home solar

Module 14: RF and Wireless Charging Applications

RF GaN for power amplifiers
High-frequency resonant converters
Inductive charging with WBG devices
Compactness and efficiency trade-offs
Case Study: GaN-based 200W wireless charger

Module 15: Trends and Future of GaN and SiC

Market projections and technology roadmaps
GaN-on-Si vs GaN-on-GaN developments
3.3kV SiC MOSFETs and beyond
Integrated GaN ICs (GaNFast, GaNPower)
Case Study: Future of WBG in aerospace power systems

Training Methodology

This course employs a participatory and hands-on approach to ensure practical learning, including:

Interactive lectures and presentations.
Group discussions and brainstorming sessions.
Hands-on exercises using real-world datasets.
Role-playing and scenario-based simulations.
Analysis of case studies to bridge theory and practice.
Peer-to-peer learning and networking.
Expert-led Q&A sessions.
Continuous feedback and personalized guidance.

Register as a group from 3 participants for a Discount

Send us an email: info@fineskilltrainingcenter.org or call +254769199797

Certification

Upon successful completion of this training, participants will be issued with a globally- recognized certificate.

Tailor-Made Course

We also offer tailor-made courses based on your needs.

Key Notes

a. The participant must be conversant with English.

b. Upon completion of training the participant will be issued with an Authorized Training Certificate

c. Course duration is flexible and the contents can be modified to fit any number of days.

d. The course fee includes facilitation training materials, 2 coffee breaks, buffet lunch and A Certificate upon successful completion of Training.

e. One-year post-training support Consultation and Coaching provided after the course.

f. Payment should be done at least a week before commence of the training, to Fineskill Training Center account, as indicated in the invoice so as to enable us prepare better for you.

Skills & Software Covered

GaN Devices SiC Devices Power Electronics Circuit Design

Programme Fee

Duration: 10 Days

Method: Online or Physical

Online Price: $2,000

Physical Price: $3,000

Certification: Accredited Certificate

View Available Dates 📄 Download Course Outline (PDF)

Available Sessions

Location

Month

Year

Oct 19 2026

19 Oct — 30 Oct 2026

💻 Online / Virtual session

Online $2,000